Tunnel junction enhanced nanowire ultraviolet light emitting diodes

A. T.M.Golam Sarwar; Brelon J. May; Julia I. Deitz; Tyler J. Grassman; David W. McComb; Roberto C. Myers

doi:10.1063/1.4930593

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

A. T.M.Golam Sarwar, Brelon J. May, Julia I. Deitz, Tyler J. Grassman, David W. McComb, Roberto C. Myers

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100μW of UV emission at ∼310nm is measured with external quantum efficiency in the range of 4-6m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.

Original language	English
Article number	101103
Journal	Applied Physics Letters
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.4930593
State	Published - Sep 7 2015
Externally published	Yes

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title = "Tunnel junction enhanced nanowire ultraviolet light emitting diodes",

abstract = "Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100μW of UV emission at ∼310nm is measured with external quantum efficiency in the range of 4-6m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.",

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AU - Sarwar, A. T.M.Golam

AU - May, Brelon J.

AU - Deitz, Julia I.

AU - Grassman, Tyler J.

AU - McComb, David W.

AU - Myers, Roberto C.

PY - 2015/9/7

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AB - Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100μW of UV emission at ∼310nm is measured with external quantum efficiency in the range of 4-6m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.

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Tunnel junction enhanced nanowire ultraviolet light emitting diodes

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