TY - GEN
T1 - Tuning optical properties of monolayer hexagonal boron nitride induced by bi-axial strain
AU - Mishra, Himani
AU - Bhattacharya, Sitangshu
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - We report the influence of bi-axial tensile mechanical strain in the range 0-15% on the band-structures and absorption spectra of monolayer hexagonal boron nitride (h-BN). First of all, we employ density functional theory to extract the ground state band-structures and see a gradual decrease of 1.054 eV in the band-gap with increase in strain from 0-15%. Many body perturbation theory is used to calculate quasi-particle band-structure and the absorption spectra peak which is found to decrease linearly with the applied strain by 1.9 eV when moving from 0-15%. There is no direct to indirect transition due to the applied strain but the second excitonic peak shows decrease in its strength as the strain increases. Also, a red shift is seen in the absorption spectra as the strain increases moving from 246 nm to 354 nm in wavelength, validating that strain engineering persist to be an efficient tool to tune the opto-electronic properties of monolayer h-BN.
AB - We report the influence of bi-axial tensile mechanical strain in the range 0-15% on the band-structures and absorption spectra of monolayer hexagonal boron nitride (h-BN). First of all, we employ density functional theory to extract the ground state band-structures and see a gradual decrease of 1.054 eV in the band-gap with increase in strain from 0-15%. Many body perturbation theory is used to calculate quasi-particle band-structure and the absorption spectra peak which is found to decrease linearly with the applied strain by 1.9 eV when moving from 0-15%. There is no direct to indirect transition due to the applied strain but the second excitonic peak shows decrease in its strength as the strain increases. Also, a red shift is seen in the absorption spectra as the strain increases moving from 246 nm to 354 nm in wavelength, validating that strain engineering persist to be an efficient tool to tune the opto-electronic properties of monolayer h-BN.
KW - exciton
KW - monolayer h-BN
KW - Strain engineering
UR - http://www.scopus.com/inward/record.url?scp=85081611278&partnerID=8YFLogxK
U2 - 10.1109/PVSC40753.2019.8980661
DO - 10.1109/PVSC40753.2019.8980661
M3 - Conference contribution
AN - SCOPUS:85081611278
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1767
EP - 1770
BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Y2 - 16 June 2019 through 21 June 2019
ER -