TY - GEN
T1 - Transient parameters and numerical calculation model on VFT in three-phase enclosed GIS
AU - Kang, N.
AU - Zou, J.-H
AU - Yang, L.-J
AU - Li, C.
AU - Wang, H.
PY - 2005/10/16
Y1 - 2005/10/16
N2 - Transient parameters and numerical calculation model are fundamental to evaluate the traveling wave on very fast transients in three-phase enclosed GIS. The numerical calculation model and the correlative transient parameters were emphatically analyzed. Because of the coupling between phase A, B, and C, a surge impedance matrix was introduced, which is equal to the product of a capacitive matrix and a inductive matrix. Furthermore, it can be seen that elements at diagonal of these matrixes are much larger than other ones, and which is of a dominant position on very fast transients. It means that the numerical calculation model to three-phase enclosed GIS can be replaced with a single-phase simplified model, which is especially useful to understand some basic aspects of very fast transient process. Considering the amplitude of very fast transient overvoltages (VFTO), the three-phase models are still necessary.
AB - Transient parameters and numerical calculation model are fundamental to evaluate the traveling wave on very fast transients in three-phase enclosed GIS. The numerical calculation model and the correlative transient parameters were emphatically analyzed. Because of the coupling between phase A, B, and C, a surge impedance matrix was introduced, which is equal to the product of a capacitive matrix and a inductive matrix. Furthermore, it can be seen that elements at diagonal of these matrixes are much larger than other ones, and which is of a dominant position on very fast transients. It means that the numerical calculation model to three-phase enclosed GIS can be replaced with a single-phase simplified model, which is especially useful to understand some basic aspects of very fast transient process. Considering the amplitude of very fast transient overvoltages (VFTO), the three-phase models are still necessary.
M3 - Conference contribution
VL - 25
T3 - Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering
SP - 112
EP - 117
BT - Proceedings of the Chinese Society for Electrical Engineering
ER -