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The fast neutron response of silicon carbide semiconductor radiation detectors

  • Frank H. Ruddy
  • , Abdul R. Dulloo
  • , John G. Seidel
  • , Mrinal K. Das
  • , Sei-Hyung Ryu
  • , Anant K. Agarwal

Research output: Contribution to conferencePaper

Abstract

Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the 28Si(n, αi) reaction set of six energy levels in the product 25Mg nucleus, and pulse height defect differences between the observed 12C(n,α0) and 28Si(n, αi) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed. © 2004 IEEE.
Original languageEnglish
Pages4575 – 4579
StatePublished - Oct 16 2004

Keywords

  • Electric resistance
  • Fission reactions
  • Fusion reactions
  • Neutron scattering
  • Neutrons
  • Radiation effects
  • Radioactive wastes
  • Semiconductor diodes
  • Silicon carbide
  • Carbon nuclides
  • Fissionable materials
  • Neutron elastic scattering
  • Silicon nuclides
  • Radiation detectors

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