The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Frank H. Ruddy; Abdul R. Dulloo; John G. Seidel; Mrinal K. Das; Sei-Hyung Ryu; Anant K. Agarwal

doi:10.1109/TNS.2006.875151

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Frank H. Ruddy
, Abdul R. Dulloo
, John G. Seidel
, Mrinal K. Das
, Sei-Hyung Ryu
, Anant K. Agarwal

Research output: Contribution to journal › Article › peer-review

103 Scopus citations

Abstract

Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the 28Si(n, α i) reaction set of six energy levels in the product 25Mg nucleus, and pulse height defect differences between the observed 12C(n, α 0) 28 Si(n, α i) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed. © 2006 IEEE.

Original language	English
Pages (from-to)	1666 – 1670
Journal	IEEE Transactions on Nuclear Science
Volume	53
Issue number	3
Early online date	Jun 30 2006
DOIs	https://doi.org/10.1109/TNS.2006.875151
State	Published - Jun 30 2006
Externally published	Yes

Keywords

Fission reactions
Fusion reactions
Neutrons
Radiation detectors
Semiconductor materials
Spectrometry
Energy spectrometry applications
Neutron spectroscopy
Radiation detection
Silicon carbide

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10.1109/TNS.2006.875151

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Cite this

@article{82ab4a90c5b7412780cacd92792ad880,

title = "The fast neutron response of 4H silicon carbide semiconductor radiation detectors",

abstract = "Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the 28Si(n, α i) reaction set of six energy levels in the product 25Mg nucleus, and pulse height defect differences between the observed 12C(n, α 0) 28 Si(n, α i) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed. {\textcopyright} 2006 IEEE.",

keywords = "Fission reactions, Fusion reactions, Neutrons, Radiation detectors, Semiconductor materials, Spectrometry, Energy spectrometry applications, Neutron spectroscopy, Radiation detection, Silicon carbide",

author = "Ruddy, \{Frank H.\} and Dulloo, \{Abdul R.\} and Seidel, \{John G.\} and Das, \{Mrinal K.\} and Sei-Hyung Ryu and Agarwal, \{Anant K.\}",

note = "Cited by: 95",

year = "2006",

month = jun,

day = "30",

doi = "10.1109/TNS.2006.875151",

language = "English",

volume = "53",

pages = "1666 – 1670",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - The fast neutron response of 4H silicon carbide semiconductor radiation detectors

AU - Ruddy, Frank H.

AU - Dulloo, Abdul R.

AU - Seidel, John G.

AU - Das, Mrinal K.

AU - Ryu, Sei-Hyung

AU - Agarwal, Anant K.

N1 - Cited by: 95

PY - 2006/6/30

Y1 - 2006/6/30

N2 - Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the 28Si(n, α i) reaction set of six energy levels in the product 25Mg nucleus, and pulse height defect differences between the observed 12C(n, α 0) 28 Si(n, α i) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed. © 2006 IEEE.

AB - Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the 28Si(n, α i) reaction set of six energy levels in the product 25Mg nucleus, and pulse height defect differences between the observed 12C(n, α 0) 28 Si(n, α i) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed. © 2006 IEEE.

KW - Fission reactions

KW - Fusion reactions

KW - Neutrons

KW - Radiation detectors

KW - Semiconductor materials

KW - Spectrometry

KW - Energy spectrometry applications

KW - Neutron spectroscopy

KW - Radiation detection

KW - Silicon carbide

U2 - 10.1109/TNS.2006.875151

DO - 10.1109/TNS.2006.875151

M3 - Article

SN - 0018-9499

VL - 53

SP - 1666

EP - 1670

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3

ER -

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Abstract

Keywords

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