The effect of Cr2O3, Nb2O5 and ZrO2 doping on the dielectric properties of CaCu3Ti4O12

Seunghwa Kwon; Chien Chih Huang; Eric A. Patterson; David P. Cann; Edward F. Alberta; Seongtae Kwon; Wesley S. Hackenberger; David P. Cann

doi:10.1016/j.matlet.2007.06.042

The effect of Cr₂O₃, Nb₂O₅ and ZrO₂ doping on the dielectric properties of CaCu₃Ti₄O₁₂

Seunghwa Kwon
, Chien Chih Huang
, Eric A. Patterson
, David P. Cann
, Edward F. Alberta
, Seongtae Kwon
, Wesley S. Hackenberger
, David P. Cann

Nuclear Science & Technology

Research output: Contribution to journal › Article › peer-review

111 Scopus citations

Abstract

The substitution of the aliovalent dopant Cr₂O₃ on the Ti site was investigated in terms of the effects on the dielectric properties at doping levels ranging from 0.1 to 1.0%. No evidence of secondary phases was observed from XRD analysis, but both the permittivity and dielectric loss of 1% Cr₂O₃ doped CaCu₃Ti₄O₁₂ were improved with K ≈ 19,000 and tan δ ≈ 0.049 at 1 kHz. Also, 1% Cr₂O₃ doping was effective at maintaining the high K up to 150 V. From these results, it can be incurred that Cr₂O₃ doping is an efficient method to achieve a high-K and low loss.

Original language	English
Pages (from-to)	633-636
Number of pages	4
Journal	Materials Letters
Volume	62
Issue number	4-5
DOIs	https://doi.org/10.1016/j.matlet.2007.06.042
State	Published - Feb 29 2008

Keywords

Ceramics
Dielectric properties
Doping

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10.1016/j.matlet.2007.06.042

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@article{45c01df2af1c412f93458357482be25e,

title = "The effect of Cr2O3, Nb2O5 and ZrO2 doping on the dielectric properties of CaCu3Ti4O12 ",

abstract = "The substitution of the aliovalent dopant Cr2O3 on the Ti site was investigated in terms of the effects on the dielectric properties at doping levels ranging from 0.1 to 1.0\%. No evidence of secondary phases was observed from XRD analysis, but both the permittivity and dielectric loss of 1\% Cr2O3 doped CaCu3Ti4O12 were improved with K ≈ 19,000 and tan δ ≈ 0.049 at 1 kHz. Also, 1\% Cr2O3 doping was effective at maintaining the high K up to 150 V. From these results, it can be incurred that Cr2O3 doping is an efficient method to achieve a high-K and low loss.",

keywords = "Ceramics, Dielectric properties, Doping",

author = "Seunghwa Kwon and Huang, \{Chien Chih\} and Patterson, \{Eric A.\} and Cann, \{David P.\} and Alberta, \{Edward F.\} and Seongtae Kwon and Hackenberger, \{Wesley S.\} and Cann, \{David P.\}",

note = "Funding Information: This work was supported by the Office of Naval Research Capacitor Program and the American Chemical Society's Petroleum Research Foundation.",

year = "2008",

month = feb,

day = "29",

doi = "10.1016/j.matlet.2007.06.042",

language = "English",

volume = "62",

pages = "633--636",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "4-5",

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TY - JOUR

T1 - The effect of Cr2O3, Nb2O5 and ZrO2 doping on the dielectric properties of CaCu3Ti4O12

AU - Kwon, Seunghwa

AU - Huang, Chien Chih

AU - Patterson, Eric A.

AU - Cann, David P.

AU - Alberta, Edward F.

AU - Kwon, Seongtae

AU - Hackenberger, Wesley S.

AU - Cann, David P.

N1 - Funding Information: This work was supported by the Office of Naval Research Capacitor Program and the American Chemical Society's Petroleum Research Foundation.

PY - 2008/2/29

Y1 - 2008/2/29

N2 - The substitution of the aliovalent dopant Cr2O3 on the Ti site was investigated in terms of the effects on the dielectric properties at doping levels ranging from 0.1 to 1.0%. No evidence of secondary phases was observed from XRD analysis, but both the permittivity and dielectric loss of 1% Cr2O3 doped CaCu3Ti4O12 were improved with K ≈ 19,000 and tan δ ≈ 0.049 at 1 kHz. Also, 1% Cr2O3 doping was effective at maintaining the high K up to 150 V. From these results, it can be incurred that Cr2O3 doping is an efficient method to achieve a high-K and low loss.

AB - The substitution of the aliovalent dopant Cr2O3 on the Ti site was investigated in terms of the effects on the dielectric properties at doping levels ranging from 0.1 to 1.0%. No evidence of secondary phases was observed from XRD analysis, but both the permittivity and dielectric loss of 1% Cr2O3 doped CaCu3Ti4O12 were improved with K ≈ 19,000 and tan δ ≈ 0.049 at 1 kHz. Also, 1% Cr2O3 doping was effective at maintaining the high K up to 150 V. From these results, it can be incurred that Cr2O3 doping is an efficient method to achieve a high-K and low loss.

KW - Ceramics

KW - Dielectric properties

KW - Doping

UR - https://www.scopus.com/pages/publications/37249043124

U2 - 10.1016/j.matlet.2007.06.042

DO - 10.1016/j.matlet.2007.06.042

M3 - Article

AN - SCOPUS:37249043124

SN - 0167-577X

VL - 62

SP - 633

EP - 636

JO - Materials Letters

JF - Materials Letters

IS - 4-5

ER -

The effect of Cr₂O₃, Nb₂O₅ and ZrO₂ doping on the dielectric properties of CaCu₃Ti₄O₁₂

Abstract

Keywords

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