Temperature dependence of electron-beam induced effects in amorphous apatite

I. T. Bae; Y. Zhang; W. J. Weber; M. Ishimaru; Y. Hirotsu; M. Higuchi

doi:10.1016/j.nimb.2008.03.160

Temperature dependence of electron-beam induced effects in amorphous apatite

I. T. Bae
, Y. Zhang
, W. J. Weber
, M. Ishimaru
, Y. Hirotsu
, M. Higuchi

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Irradiation effects on pre-amorphized Sr₂Nd₈(SiO₄)₆O₂ have been investigated under 200 and 300 keV electron-beam (e-beam) irradiation at 130 and 480 K using in situ transmission electron microscopy. At 480 K, recrystallization occurred from the amorphous/crystalline interface under both 200 and 300 keV e-beam irradiation. At 130 K, the 200 keV e-beam irradiation induced recrystallization only; however, 300 keV e-beam irradiation induced both recrystallization and an electron hammering effect in the amorphous material that resulted in radial expansion perpendicular to the incident e-beam direction and shrinkage parallel to the e-beam direction. Ionization-induced processes and knock-on displacement damage are suggested to be the mechanisms for the recrystallization and the electron hammering effect, respectively.

Original language	English
Pages (from-to)	3037-3042
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	266
Issue number	12-13
DOIs	https://doi.org/10.1016/j.nimb.2008.03.160
State	Published - Jun 2008
Externally published	Yes

Keywords

Apatite silicate
Electron hammering
Electron irradiation
Recrystallization
Transmission electron microscopy

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10.1016/j.nimb.2008.03.160

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@article{e07b3b1aac224123b7c5e45ecc991f5c,

title = "Temperature dependence of electron-beam induced effects in amorphous apatite",

abstract = "Irradiation effects on pre-amorphized Sr2Nd8(SiO4)6O2 have been investigated under 200 and 300 keV electron-beam (e-beam) irradiation at 130 and 480 K using in situ transmission electron microscopy. At 480 K, recrystallization occurred from the amorphous/crystalline interface under both 200 and 300 keV e-beam irradiation. At 130 K, the 200 keV e-beam irradiation induced recrystallization only; however, 300 keV e-beam irradiation induced both recrystallization and an electron hammering effect in the amorphous material that resulted in radial expansion perpendicular to the incident e-beam direction and shrinkage parallel to the e-beam direction. Ionization-induced processes and knock-on displacement damage are suggested to be the mechanisms for the recrystallization and the electron hammering effect, respectively.",

keywords = "Apatite silicate, Electron hammering, Electron irradiation, Recrystallization, Transmission electron microscopy",

author = "Bae, \{I. T.\} and Y. Zhang and Weber, \{W. J.\} and M. Ishimaru and Y. Hirotsu and M. Higuchi",

note = "Funding Information: This work was supported by the Office of Basic Energy Sciences, US Department of Energy under Contract No. DE-AC05-76RL01830.",

year = "2008",

month = jun,

doi = "10.1016/j.nimb.2008.03.160",

language = "English",

volume = "266",

pages = "3037--3042",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "12-13",

}

TY - JOUR

T1 - Temperature dependence of electron-beam induced effects in amorphous apatite

AU - Bae, I. T.

AU - Zhang, Y.

AU - Weber, W. J.

AU - Ishimaru, M.

AU - Hirotsu, Y.

AU - Higuchi, M.

N1 - Funding Information: This work was supported by the Office of Basic Energy Sciences, US Department of Energy under Contract No. DE-AC05-76RL01830.

PY - 2008/6

Y1 - 2008/6

N2 - Irradiation effects on pre-amorphized Sr2Nd8(SiO4)6O2 have been investigated under 200 and 300 keV electron-beam (e-beam) irradiation at 130 and 480 K using in situ transmission electron microscopy. At 480 K, recrystallization occurred from the amorphous/crystalline interface under both 200 and 300 keV e-beam irradiation. At 130 K, the 200 keV e-beam irradiation induced recrystallization only; however, 300 keV e-beam irradiation induced both recrystallization and an electron hammering effect in the amorphous material that resulted in radial expansion perpendicular to the incident e-beam direction and shrinkage parallel to the e-beam direction. Ionization-induced processes and knock-on displacement damage are suggested to be the mechanisms for the recrystallization and the electron hammering effect, respectively.

AB - Irradiation effects on pre-amorphized Sr2Nd8(SiO4)6O2 have been investigated under 200 and 300 keV electron-beam (e-beam) irradiation at 130 and 480 K using in situ transmission electron microscopy. At 480 K, recrystallization occurred from the amorphous/crystalline interface under both 200 and 300 keV e-beam irradiation. At 130 K, the 200 keV e-beam irradiation induced recrystallization only; however, 300 keV e-beam irradiation induced both recrystallization and an electron hammering effect in the amorphous material that resulted in radial expansion perpendicular to the incident e-beam direction and shrinkage parallel to the e-beam direction. Ionization-induced processes and knock-on displacement damage are suggested to be the mechanisms for the recrystallization and the electron hammering effect, respectively.

KW - Apatite silicate

KW - Electron hammering

KW - Electron irradiation

KW - Recrystallization

KW - Transmission electron microscopy

UR - https://www.scopus.com/pages/publications/44649104460

U2 - 10.1016/j.nimb.2008.03.160

DO - 10.1016/j.nimb.2008.03.160

M3 - Article

AN - SCOPUS:44649104460

SN - 0168-583X

VL - 266

SP - 3037

EP - 3042

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 12-13

ER -

Temperature dependence of electron-beam induced effects in amorphous apatite

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Keywords

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