Synthesis of ultra-thin carbon layers on SiC substrate by ion implantation

Keyphrases

• Ion Implantation 100%
• Si-face 100%
• SiC Substrate 100%
• Thin Carbon Layer 100%
• Ultrathin Carbon Layers 100%
• Chemical Analysis 50%
• Industrial Production 50%
• Synthesis Methods 50%
• Thermal Decomposition 50%
• Direct Synthesis 50%
• Thermal Annealing 50%
• Annealing Process 50%
• C-ion 50%
• Growth Mechanism 50%
• Uniform Thickness 50%
• Bilayer Graphene 50%
• Graphitization Temperature 50%
• Semiconducting Substrate 50%
• Multilayer Graphene Films 50%
• Silicon Carbide Surfaces 50%
• Ion Implantation Technique 50%
• Nanoelectronics 50%
• Epitaxial Graphene on SiC 50%

Material Science

• Ion Implantation 100%
• Surface (Surface Science) 66%
• Annealing 66%
• Graphene 66%
• Film 33%
• Silicon Carbide 33%
• Monolayer 33%