@inproceedings{ebe7740ac9ea4b029c1e3d265bfd9cb4,
title = "Silver migration in SiC: A new perspective",
abstract = "The effect of thermal annealing on the migration of silver in CVD silicon carbide has been investigated. Ion implanted CVD silicon carbide has been annealed at 1500°C for times exceeding 200 hours. Detailed microstructural and micro-chemical analysis has been performed before and after annealing. The results of the study indicate that silver does not migrate by diffusion in CVD silicon carbide for the conditions studied. Instead, it appears that the silver phase separates and is trapped in the silicon carbide matrix.",
author = "MacLean, \{H. J.\} and Ballinger, \{R. G.\}",
year = "2003",
language = "English",
isbn = "0894486772",
series = "Global 2003: Atoms for Prosperity: Updating Eisenhowers Global Vision for Nuclear Energy",
pages = "527--530",
booktitle = "Global 2003",
note = "Global 2003: Atoms for Prosperity: Updating Eisenhower's Global Vision for Nuclear Energy ; Conference date: 16-11-2003 Through 20-11-2003",
}