Semiconductor radiation source power monitor

Francis H. Ruddy; Abdul Dulloo; John G. Seidel; Frederick W. Hantz; Louis R. Grobmyer

Semiconductor radiation source power monitor

Francis H. Ruddy (Inventor), Abdul Dulloo (Inventor), John G. Seidel (Inventor), Frederick W. Hantz (Inventor), Louis R. Grobmyer (Inventor)

Research output: Patent

Abstract

A solid state semiconductor neutron detector that automatically varies its sensitivity to provide a pulsed output over the entire range of operation of a nuclear reactor. The sensitivity is varied by changing the thickness or makeup of a converter layer that emits charged particles to the active region of the semiconductor surface.

Original language	American English
Patent number	US6542565B2
Filing date	10/17/01
State	Published - Apr 1 2003
Externally published	Yes

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title = "Semiconductor radiation source power monitor",

abstract = "A solid state semiconductor neutron detector that automatically varies its sensitivity to provide a pulsed output over the entire range of operation of a nuclear reactor. The sensitivity is varied by changing the thickness or makeup of a converter layer that emits charged particles to the active region of the semiconductor surface.",

author = "Ruddy, {Francis H.} and Abdul Dulloo and Seidel, {John G.} and Hantz, {Frederick W.} and Grobmyer, {Louis R.}",

year = "2003",

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day = "1",

language = "American English",

type = "Patent",

note = "US6542565B2",

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TY - PAT

T1 - Semiconductor radiation source power monitor

AU - Ruddy, Francis H.

AU - Dulloo, Abdul

AU - Seidel, John G.

AU - Hantz, Frederick W.

AU - Grobmyer, Louis R.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - A solid state semiconductor neutron detector that automatically varies its sensitivity to provide a pulsed output over the entire range of operation of a nuclear reactor. The sensitivity is varied by changing the thickness or makeup of a converter layer that emits charged particles to the active region of the semiconductor surface.

AB - A solid state semiconductor neutron detector that automatically varies its sensitivity to provide a pulsed output over the entire range of operation of a nuclear reactor. The sensitivity is varied by changing the thickness or makeup of a converter layer that emits charged particles to the active region of the semiconductor surface.

M3 - Patent

M1 - US6542565B2

Y2 - 2001/10/17

ER -

Semiconductor radiation source power monitor

Abstract

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