TY - JOUR
T1 - Role of Defects and Power Dissipation on Ferroelectric Memristive Switching
AU - Roy, Pinku
AU - Kunwar, Sundar
AU - Zhang, Di
AU - Chen, Di
AU - Corey, Zachary
AU - Rutherford, Bethany X.
AU - Wang, Haiyan
AU - MacManus-Driscoll, Judith L.
AU - Jia, Quanxi
AU - Chen, Aiping
N1 - Funding Information:
The work at Los Alamos National Laboratory was supported by the NNSA's Laboratory Directed Research and Development Program and was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy Office of Science. Los Alamos National Laboratory, an affirmative action equal opportunity employer, is managed by Triad National Security, LLC for the U.S. Department of Energy's NNSA, under contract 89233218CNA000001. The US-UK collaborative effort was funded by the U.S. National Science Foundation (ECCS-1902623 (University at Buffalo, SUNY), ECCS-1902644 (Purdue University)) and the EPRSC, grant EP/T012218/1. J.L.M.-D. acknowledges the Royal Academy of Engineering, grant CIET 1819 24. P. R., Z. C., and Q. X. J. acknowledge the CINT Users Program. B. X. R. acknowledges the support of the Office of Science Graduate Student Research Program.
Funding Information:
The work at Los Alamos National Laboratory was supported by the NNSA's Laboratory Directed Research and Development Program and was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy Office of Science. Los Alamos National Laboratory, an affirmative action equal opportunity employer, is managed by Triad National Security, LLC for the U.S. Department of Energy's NNSA, under contract 89233218CNA000001. The US‐UK collaborative effort was funded by the U.S. National Science Foundation (ECCS‐1902623 (University at Buffalo, SUNY), ECCS‐1902644 (Purdue University)) and the EPRSC, grant EP/T012218/1. J.L.M.‐D. acknowledges the Royal Academy of Engineering, grant CIET 1819 24. P. R., Z. C., and Q. X. J. acknowledge the CINT Users Program. B. X. R. acknowledges the support of the Office of Science Graduate Student Research Program.
Publisher Copyright:
© 2022 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
PY - 2022/6
Y1 - 2022/6
N2 - Advancement of information technology requires low power, high speed, and large capacity non-volatile memory. Memristors have potential applications for not only information storage but also neuromorphic computation. Memristive devices are mostly focused on the use of binary oxides as the resistive switching materials. On the other hand, polarization assisted memristive devices based on ternary ferroelectric oxides are attracting more attention due to their unique switching properties. However, the underlying switching mechanisms and the current–voltage rotation direction are still not fully understood yet. By comparing stoichiometric BaTiO3, BiFeO3, and Bi1-xFeO3-δ ferroelectric memristors with different cation stoichiometry, it is found that off-stoichiometry-induced traps can play a critical role in controlling the ferroelectric memristive switching behavior. Ferroelectrics with slight off-stoichiometry show greatly enhanced switching properties, and the switching on/off ratio is mainly determined by the trap energy levels and concentrations. The rotation direction of current–voltage hysteresis loop is affected by the defects, which can be controlled by synthesis and power dissipation. These findings provide insight in understanding the role of defects in ferroelectric memristors and offer guidance to design ferroelectric memristors with enhanced performance.
AB - Advancement of information technology requires low power, high speed, and large capacity non-volatile memory. Memristors have potential applications for not only information storage but also neuromorphic computation. Memristive devices are mostly focused on the use of binary oxides as the resistive switching materials. On the other hand, polarization assisted memristive devices based on ternary ferroelectric oxides are attracting more attention due to their unique switching properties. However, the underlying switching mechanisms and the current–voltage rotation direction are still not fully understood yet. By comparing stoichiometric BaTiO3, BiFeO3, and Bi1-xFeO3-δ ferroelectric memristors with different cation stoichiometry, it is found that off-stoichiometry-induced traps can play a critical role in controlling the ferroelectric memristive switching behavior. Ferroelectrics with slight off-stoichiometry show greatly enhanced switching properties, and the switching on/off ratio is mainly determined by the trap energy levels and concentrations. The rotation direction of current–voltage hysteresis loop is affected by the defects, which can be controlled by synthesis and power dissipation. These findings provide insight in understanding the role of defects in ferroelectric memristors and offer guidance to design ferroelectric memristors with enhanced performance.
KW - defects
KW - electrical properties
KW - ferroelectric memristors
KW - resistive switching
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=85127237232&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/49b8096c-280a-3f5f-a674-e2286849113a/
U2 - 10.1002/aelm.202101392
DO - 10.1002/aelm.202101392
M3 - Article
AN - SCOPUS:85127237232
SN - 2199-160X
VL - 8
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 6
M1 - 2101392
ER -