Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

Wenshen Li, Kazuki Nomoto, Aditya Sundar, Kevin Lee, Mingda Zhu, Zongyang Hu, Edward Beam, Jinqiao Xie, Manyam Pilla, Xiang Gao, Sergei Rouvimov, Debdeep Jena, Huili Grace Xing

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