Abstract
A radiation resistant solid state neutron detector is disclosed. The detector uses a neutron convertor material such as boron or lithium to react with neutrons to create charged particles that are received in a semiconductor active region of the detector. The active thickness of the detector is smaller than the range of the charged particles. Since most of the radiation damage produced by impinging charged particles occurs near the end of the range of the particles, displacement damage predominantly occurs outside of the active region. Although the charged particles pass through the semiconductor material, the particles cause electron excitation within the semiconductor material which is detected in the form of an electronic pulse. A preferred semiconductor material for the active region is silicon carbide. The detectors provide increased resistance to radiation damage, improve high temperature operation, and the ability to obtain real time measurements of neutron flux in reactor cavities and other previously inaccessible locations.
| Original language | American English |
|---|---|
| Patent number | US5726453A |
| Filing date | 09/30/96 |
| State | Published - Mar 10 1998 |
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