Proton NMR hole-burning in hot wire a-Si:H

J. Herberg; P. A. Fedders; D. J. Leopold; R. E. Norberg; R. E.I. Schropp

doi:10.1557/proc-715-a23.1

Proton NMR hole-burning in hot wire a-Si:H

J. Herberg
, P. A. Fedders
, D. J. Leopold
, R. E. Norberg
, R. E.I. Schropp

Energy & Environmental Science & Technology

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Proton NMR near 200 MHz has been used to examine the dynamics of hole-burning in HWCVD a-Si:H films deposited from SiH₄. Radiofrequency hole-burning is a tool to distinguish inhomogeneous broadening from homogeneous broadening. The 3 kHz FWHM resonance line from T-site-trapped H₂ molecules shows a hole-burn behavior similar to that found for PECVD a-Si:H films, as does the 24 kHz FWHM line from clustered silicon-bonded hydrogens. However the ∼80 kHz FWHM superbroad line varies with tip angle uniformly across the line for hole-burns applied at any location within ±50 kHz from the resonance center. The superbroad line is homogeneously broadened and apparently arises from super-close SiH clusters with inter-proton distances considerably less than 2 Å.

Original language	English
Pages (from-to)	393-398
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	715
DOIs	https://doi.org/10.1557/proc-715-a23.1
State	Published - 2002
Event	Amorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States Duration: Apr 2 2002 → Apr 5 2002

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title = "Proton NMR hole-burning in hot wire a-Si:H",

abstract = "Proton NMR near 200 MHz has been used to examine the dynamics of hole-burning in HWCVD a-Si:H films deposited from SiH4. Radiofrequency hole-burning is a tool to distinguish inhomogeneous broadening from homogeneous broadening. The 3 kHz FWHM resonance line from T-site-trapped H2 molecules shows a hole-burn behavior similar to that found for PECVD a-Si:H films, as does the 24 kHz FWHM line from clustered silicon-bonded hydrogens. However the ∼80 kHz FWHM superbroad line varies with tip angle uniformly across the line for hole-burns applied at any location within ±50 kHz from the resonance center. The superbroad line is homogeneously broadened and apparently arises from super-close SiH clusters with inter-proton distances considerably less than 2 {\AA}.",

author = "J. Herberg and Fedders, \{P. A.\} and Leopold, \{D. J.\} and Norberg, \{R. E.\} and Schropp, \{R. E.I.\}",

year = "2002",

doi = "10.1557/proc-715-a23.1",

language = "English",

volume = "715",

pages = "393--398",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Amorphous and Heterogeneous Silicon Films 2002 ; Conference date: 02-04-2002 Through 05-04-2002",

}

TY - JOUR

T1 - Proton NMR hole-burning in hot wire a-Si:H

AU - Herberg, J.

AU - Fedders, P. A.

AU - Leopold, D. J.

AU - Norberg, R. E.

AU - Schropp, R. E.I.

PY - 2002

Y1 - 2002

N2 - Proton NMR near 200 MHz has been used to examine the dynamics of hole-burning in HWCVD a-Si:H films deposited from SiH4. Radiofrequency hole-burning is a tool to distinguish inhomogeneous broadening from homogeneous broadening. The 3 kHz FWHM resonance line from T-site-trapped H2 molecules shows a hole-burn behavior similar to that found for PECVD a-Si:H films, as does the 24 kHz FWHM line from clustered silicon-bonded hydrogens. However the ∼80 kHz FWHM superbroad line varies with tip angle uniformly across the line for hole-burns applied at any location within ±50 kHz from the resonance center. The superbroad line is homogeneously broadened and apparently arises from super-close SiH clusters with inter-proton distances considerably less than 2 Å.

AB - Proton NMR near 200 MHz has been used to examine the dynamics of hole-burning in HWCVD a-Si:H films deposited from SiH4. Radiofrequency hole-burning is a tool to distinguish inhomogeneous broadening from homogeneous broadening. The 3 kHz FWHM resonance line from T-site-trapped H2 molecules shows a hole-burn behavior similar to that found for PECVD a-Si:H films, as does the 24 kHz FWHM line from clustered silicon-bonded hydrogens. However the ∼80 kHz FWHM superbroad line varies with tip angle uniformly across the line for hole-burns applied at any location within ±50 kHz from the resonance center. The superbroad line is homogeneously broadened and apparently arises from super-close SiH clusters with inter-proton distances considerably less than 2 Å.

UR - https://www.scopus.com/pages/publications/0036920096

U2 - 10.1557/proc-715-a23.1

DO - 10.1557/proc-715-a23.1

M3 - Conference article

AN - SCOPUS:0036920096

SN - 0272-9172

VL - 715

SP - 393

EP - 398

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Amorphous and Heterogeneous Silicon Films 2002

Y2 - 2 April 2002 through 5 April 2002

ER -

Proton NMR hole-burning in hot wire a-Si:H

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