Polarization engineered deep ultraviolet nanowire LEDs integrated on silicon and metal substrates

Aim Golam Sarwar; Breton J. May; R. C. Myers

doi:10.1109/PHOSST.2015.7248229

Polarization engineered deep ultraviolet nanowire LEDs integrated on silicon and metal substrates

Aim Golam Sarwar, Breton J. May, R. C. Myers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

AlGaN nanowire heterostractures are promising for realization of efficient ultraviolet LEDs due to their tolerance to strain [1] and their ability to be grown and electronically integrated on silicon wafers. Previously we developed polarization-induced nanowire LEDs that include Al composition grading resulting in n-type and p-type doping within nanowires [2]. Because the barriers in this structure are A1N, we can incorporate AlGaN quantum disk active regions with emission tunable out to deep ultraviolet wavelengths. These nanowire heterostractures exhibit dominant N-face polarity [3] which has the advantage of allowing for n-type top contacts favorable for Nitride LEDs. However, this poses a challenge due to the difficultly of forming a bottom p-type contact to p-AlGaN.

Original language	English
Title of host publication	2015 IEEE Summer Topicals Meeting Series, SUM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	125-126
Number of pages	2
ISBN (Electronic)	9781479974689
DOIs	https://doi.org/10.1109/PHOSST.2015.7248229
State	Published - Sep 9 2015
Externally published	Yes
Event	IEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas Duration: Jul 13 2015 → Jul 15 2015

Publication series

Name	2015 IEEE Summer Topicals Meeting Series, SUM 2015

Conference

Conference	IEEE Summer Topicals Meeting Series, SUM 2015
Country/Territory	Bahamas
City	Nassau
Period	07/13/15 → 07/15/15

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10.1109/PHOSST.2015.7248229

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Sarwar, A. G., May, B. J., & Myers, R. C. (2015). Polarization engineered deep ultraviolet nanowire LEDs integrated on silicon and metal substrates. In 2015 IEEE Summer Topicals Meeting Series, SUM 2015 (pp. 125-126). Article 7248229 (2015 IEEE Summer Topicals Meeting Series, SUM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2015.7248229

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title = "Polarization engineered deep ultraviolet nanowire LEDs integrated on silicon and metal substrates",

abstract = "AlGaN nanowire heterostractures are promising for realization of efficient ultraviolet LEDs due to their tolerance to strain [1] and their ability to be grown and electronically integrated on silicon wafers. Previously we developed polarization-induced nanowire LEDs that include Al composition grading resulting in n-type and p-type doping within nanowires [2]. Because the barriers in this structure are A1N, we can incorporate AlGaN quantum disk active regions with emission tunable out to deep ultraviolet wavelengths. These nanowire heterostractures exhibit dominant N-face polarity [3] which has the advantage of allowing for n-type top contacts favorable for Nitride LEDs. However, this poses a challenge due to the difficultly of forming a bottom p-type contact to p-AlGaN.",

author = "Sarwar, {Aim Golam} and May, {Breton J.} and Myers, {R. C.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Summer Topicals Meeting Series, SUM 2015 ; Conference date: 13-07-2015 Through 15-07-2015",

year = "2015",

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day = "9",

doi = "10.1109/PHOSST.2015.7248229",

language = "English",

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Sarwar, AG, May, BJ & Myers, RC 2015, Polarization engineered deep ultraviolet nanowire LEDs integrated on silicon and metal substrates. in 2015 IEEE Summer Topicals Meeting Series, SUM 2015., 7248229, 2015 IEEE Summer Topicals Meeting Series, SUM 2015, Institute of Electrical and Electronics Engineers Inc., pp. 125-126, IEEE Summer Topicals Meeting Series, SUM 2015, Nassau, Bahamas, 07/13/15. https://doi.org/10.1109/PHOSST.2015.7248229

Polarization engineered deep ultraviolet nanowire LEDs integrated on silicon and metal substrates. / Sarwar, Aim Golam; May, Breton J.; Myers, R. C.
2015 IEEE Summer Topicals Meeting Series, SUM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 125-126 7248229 (2015 IEEE Summer Topicals Meeting Series, SUM 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - AlGaN nanowire heterostractures are promising for realization of efficient ultraviolet LEDs due to their tolerance to strain [1] and their ability to be grown and electronically integrated on silicon wafers. Previously we developed polarization-induced nanowire LEDs that include Al composition grading resulting in n-type and p-type doping within nanowires [2]. Because the barriers in this structure are A1N, we can incorporate AlGaN quantum disk active regions with emission tunable out to deep ultraviolet wavelengths. These nanowire heterostractures exhibit dominant N-face polarity [3] which has the advantage of allowing for n-type top contacts favorable for Nitride LEDs. However, this poses a challenge due to the difficultly of forming a bottom p-type contact to p-AlGaN.

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Polarization engineered deep ultraviolet nanowire LEDs integrated on silicon and metal substrates

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