Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

Keyphrases

• Phase-field Model 100%
• Selective Area Epitaxy 100%
• GaN Growth 100%
• Mask Geometry 100%
• Complex Mask 100%
• Deposition Rate 66%
• Orientation Dependence 66%
• Three-dimensional (3D) 33%
• Light-emitting Diodes 33%
• Processing Conditions 33%
• Materials Synthesis 33%
• Crystal Orientation 33%
• Solar Cell 33%
• Optoelectronic Applications 33%
• Low Index 33%
• Crystal Facet 33%
• Template Layer 33%
• C-plane 33%
• A-plane 33%
• Relative Growth Rate 33%

Material Science

• Epitaxy 100%
• Materials Synthesis 50%
• Solar Cell 50%
• Light-Emitting Diode 50%