Origin of radiation tolerance in 3C-SiC with nanolayered planar defects

Manabu Ishimaru; Yanwen Zhang; Steven Shannon; William J. Weber

doi:10.1063/1.4813593

Origin of radiation tolerance in 3C-SiC with nanolayered planar defects

Manabu Ishimaru
, Yanwen Zhang
, Steven Shannon
, William J. Weber

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang, Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at (1 ̄ 11) and (11 ̄ 1) planar defects. Radiation-induced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects, which probably enhances the damage recovery.

Original language	English
Article number	033104
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4813593
State	Published - Jul 15 2013
Externally published	Yes

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title = "Origin of radiation tolerance in 3C-SiC with nanolayered planar defects",

abstract = "We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang, Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at (1{\= } 11) and (11{\= } 1) planar defects. Radiation-induced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects, which probably enhances the damage recovery.",

author = "Manabu Ishimaru and Yanwen Zhang and Steven Shannon and Weber, \{William J.\}",

note = "Funding Information: This work was supported in part by Grant-in-Aid for Scientific Research (B) (Grant No. 25289249) from the Ministry of Education, Sports, Science, and Technology, Japan (MI) and by the U.S. Department of Energy, Nuclear Energy University Programs (YZ, SS, WJW). TEM observations using a JEOL JEM-3000 F were performed at the Comprehensive Analysis Center of ISIR, Osaka University.",

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doi = "10.1063/1.4813593",

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T1 - Origin of radiation tolerance in 3C-SiC with nanolayered planar defects

AU - Ishimaru, Manabu

AU - Zhang, Yanwen

AU - Shannon, Steven

AU - Weber, William J.

N1 - Funding Information: This work was supported in part by Grant-in-Aid for Scientific Research (B) (Grant No. 25289249) from the Ministry of Education, Sports, Science, and Technology, Japan (MI) and by the U.S. Department of Energy, Nuclear Energy University Programs (YZ, SS, WJW). TEM observations using a JEOL JEM-3000 F were performed at the Comprehensive Analysis Center of ISIR, Osaka University.

PY - 2013/7/15

Y1 - 2013/7/15

N2 - We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang, Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at (1 ̄ 11) and (11 ̄ 1) planar defects. Radiation-induced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects, which probably enhances the damage recovery.

AB - We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang, Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at (1 ̄ 11) and (11 ̄ 1) planar defects. Radiation-induced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects, which probably enhances the damage recovery.

UR - https://www.scopus.com/pages/publications/84881517888

U2 - 10.1063/1.4813593

DO - 10.1063/1.4813593

M3 - Article

AN - SCOPUS:84881517888

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033104

ER -

Origin of radiation tolerance in 3C-SiC with nanolayered planar defects

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