Observation of gapless nodal-line states in NdSbTe

Lanthanide (Ln)-based systems in ZrSiS-type nodal-line semimetals have been subjects of research investigations as grounds for studying the interplay of topology with possible magnetic ordering and electronic correlations that may originate from the presence of Ln4f electrons. In this study, we carried out a thorough study of a LnSbTe system, NdSbTe, by using angle-resolved photoemission spectroscopy along with first-principles calculations and thermodynamic measurements. We experimentally detect the presence of multiple gapless nodal-line states, which is well supported by first-principles calculations. A dispersive and an almost nondispersive nodal line exist along the bulk X-R direction. Another nodal line is present well below the Fermi level across the Γ-M direction, which is formed by bands with high Fermi velocity that seem to be sensitive to light polarization. Our study provides insight into the electronic structure of an alternative LnSbTe material system that will aid towards understanding the connection of Ln elements with topological electronic structures in these systems.