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Nanoscale engineering of radiation tolerant silicon carbide
Yanwen Zhang
, Manabu Ishimaru
, Tamas Varga
, Takuji Oda
, Chris Hardiman
, Haizhou Xue
, Yutai Katoh
, Steven Shannon
, William J. Weber
Research output
:
Contribution to journal
›
Article
›
peer-review
126
Scopus citations
Overview
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Keyphrases
Silicon Carbide
100%
Radiation Tolerance
100%
Stacking Faults
100%
Nanoscale Engineering
100%
High Density
75%
Irradiation
50%
Radiation Resistance
50%
Nanoengineering
50%
Molecular Dynamics Simulation
25%
Order of Magnitude
25%
Collision Cascades
25%
Microstructure
25%
Grain Structure
25%
Room Temperature
25%
Nanolayers
25%
Nanograins
25%
Recombination
25%
Radiation Defects
25%
Defect Annihilation
25%
Self-healing
25%
Enhanced Mobility
25%
Amorphous-to-crystalline Transition
25%
Nanocrystalline SiC
25%
Single-crystal SiC
25%
Engineering
Engineering
100%
Fits and Tolerances
100%
Nanoscale
100%
Room Temperature
100%
Induced Defect
100%
Nanocrystalline
100%
Collision Cascade
100%
Material Science
Crystal Defect
100%
Silicon Carbide
100%
Density
75%
Point Defect
50%
Crystal Microstructure
25%
Nanocrystalline
25%
Single Crystal
25%