Molecular beam epitaxy of GaAs templates on water soluble NaCl thin films

Brelon J. May, Jae Jin Kim, Patrick Walker, Helio R. Moutinho, William E. McMahon, Aaron J. Ptak, David L. Young

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Expensive III-V substrates are cost limiting for the adoption of many technologies. Thus, being able to reuse the original substrate is highly desirable. Existing substrate reuse techniques have significant drawbacks, but this work discusses a new method using molecular beam epitaxy deposition of water soluble NaCl thin films on commonly employed (0 0 1) GaAs substrates. Single-crystal GaAs templates are grown on continuous NaCl layers utilizing careful exposure of the NaCl to an in-situ electron beam and a low temperature nucleation layer. The template layers can be quickly removed from the substrate via dissolution of the NaCl. After liftoff, the original wafer shows an increase in rms surface roughness of only 0.2 nm.

Original languageEnglish
Article number126617
JournalJournal of Crystal Growth
Volume586
Early online dateMar 12 2022
DOIs
StatePublished - May 15 2022
Externally publishedYes

Keywords

  • A1. Nucleation
  • A1. Reflection high energy electron diffraction
  • A1. Substrates
  • A3. Molecular beam epitaxy
  • B1. Salts
  • B2. Semiconducting gallium arsenide

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