Measurement of the Kapitza resistance across a bicrystal interface

D. H. Hurley; M. Khafizov; S. L. Shinde

doi:10.1063/1.3573511

Measurement of the Kapitza resistance across a bicrystal interface

D. H. Hurley
, M. Khafizov
, S. L. Shinde

Materials, Manufacturing, & Bioenergy S&T

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

The Kapitza resistance across a Si bicrystal interface was measured using a pump probe optical technique. This approach, termed time resolved thermal wave microscopy (TRTWM), uses ultrafast laser pulses to image lateral thermal transport in bare semiconductors. The sample geometry is that of a Si bicrystal with the vertically oriented boundary intersecting the sample surface. High resolution transmission electron microscopy of the boundary region revealed a thin SiO₂ layer at the interface. By comparing experimental results with a continuum thermal transport model the Kapitza resistance between the Si and SiO₂ was estimated to be 2.3 × 10^-9 m ²K/W.

Original language	English
Article number	083504
Journal	Journal of Applied Physics
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.3573511
State	Published - Apr 15 2011

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title = "Measurement of the Kapitza resistance across a bicrystal interface",

abstract = "The Kapitza resistance across a Si bicrystal interface was measured using a pump probe optical technique. This approach, termed time resolved thermal wave microscopy (TRTWM), uses ultrafast laser pulses to image lateral thermal transport in bare semiconductors. The sample geometry is that of a Si bicrystal with the vertically oriented boundary intersecting the sample surface. High resolution transmission electron microscopy of the boundary region revealed a thin SiO2 layer at the interface. By comparing experimental results with a continuum thermal transport model the Kapitza resistance between the Si and SiO2 was estimated to be 2.3 × 10-9 m 2K/W.",

author = "Hurley, \{D. H.\} and M. Khafizov and Shinde, \{S. L.\}",

note = "Funding Information: D.H.H. and M.K. were supported as part of the Center for Materials Science of Nuclear Fuel, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. 2009INL-FWP1356. The bicrystal fabrication was supported by the SNL Laboratory Directed Research and Development Program. ",

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N2 - The Kapitza resistance across a Si bicrystal interface was measured using a pump probe optical technique. This approach, termed time resolved thermal wave microscopy (TRTWM), uses ultrafast laser pulses to image lateral thermal transport in bare semiconductors. The sample geometry is that of a Si bicrystal with the vertically oriented boundary intersecting the sample surface. High resolution transmission electron microscopy of the boundary region revealed a thin SiO2 layer at the interface. By comparing experimental results with a continuum thermal transport model the Kapitza resistance between the Si and SiO2 was estimated to be 2.3 × 10-9 m 2K/W.

AB - The Kapitza resistance across a Si bicrystal interface was measured using a pump probe optical technique. This approach, termed time resolved thermal wave microscopy (TRTWM), uses ultrafast laser pulses to image lateral thermal transport in bare semiconductors. The sample geometry is that of a Si bicrystal with the vertically oriented boundary intersecting the sample surface. High resolution transmission electron microscopy of the boundary region revealed a thin SiO2 layer at the interface. By comparing experimental results with a continuum thermal transport model the Kapitza resistance between the Si and SiO2 was estimated to be 2.3 × 10-9 m 2K/W.

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Measurement of the Kapitza resistance across a bicrystal interface

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