Investigation of diluted magnetic semiconductor and nano magnetic material by ion beam technology

In this paper, we focus on constitution, magnetism modification and characterization of GaN-based materials using ion beam technology and formation of the nano structure by implanting Mn⁺ or Co⁺ ion of different doses into the film samples. SQUID and AGM were used to measure the magnetic properties, such as coercivity and saturation magnetization, for the samples before and after annealing, M-H and M-T curves showed ferromagnetism in the films at both low temperature and room temperature. RBS/C, PIXE and XRD were used to analyze the microstructure, content of doping transition metal and damage. The nano-cluster of ferromagnetism particle was observed under HRTEM.