Intersubband transitions in In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum wells

F. Szmulowicz, M. O. Manasreh, C. Kutsche, C. E. Stutz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Intersubband transitions in a series of well-doped ([Si] = 2.0×1018 cm-3) In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum well samples were studied as a function of the well width by using the optical absorption technique. A single intersubband transition is observed in samples in which the Fermi energy level is between the ground and the first excited states in the quantum well. On the other hand, two intersubband transitions were recorded in samples where the Fermi energy level lies between the first and the second excited states. These two intersubband transitions were attributed to ground-to-first excited states and first-to-second excited states transitions. The energy separation between the latter two intersubband transitions was found to increase as the well width is increased. The fact that two intersubband transitions were observed in certain samples may suggest that specially designed quantum wells can be used for two color long wavelength infrared detectors.

Original languageEnglish
Title of host publicationInfrared Detectors - Materials, Processing, and Devices
EditorsRalph L. Dawson, Ami Appelbaum
PublisherPubl by Materials Research Society
Pages53-58
Number of pages6
ISBN (Print)1558991956
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 14 1993Apr 16 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume299
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period04/14/9304/16/93

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