Improving the high-temperature oxidation resistance of Zr2 Al3C4 by silicon pack cementation

L. F. He; Y. W. Bao; M. S. Li; J. Y. Wang; Y. C. Zhou

doi:10.1557/jmr.2008.0285

Improving the high-temperature oxidation resistance of Zr₂ Al₃C₄ by silicon pack cementation

L. F. He
, Y. W. Bao
, M. S. Li
, J. Y. Wang
, Y. C. Zhou

Materials and Fuels Complex

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Silicon pack cementation has been applied to improve the oxidation resistance of Zr₂ Al₃C₄. The Si pack coating is mainly composed of an inner layer of ZrSi₂ and SiC and an outer layer of Al₂O₃ at 1200 °C. The growth kinetics of silicide coating at 1000-1200 °C obey a parabolic law with an activation energy of 110.3 ± 16.7 kJ/mol, which is controlled by inward diffusion of Si and outward diffusion of Al. Compared with Zr₂ Al₃C₄, the oxidation resistance of siliconized Zr₂Al₃C₄ is greatly improved due to the formation of protective oxidation products, aluminosilicate glass, mullite, and ZrSiO₄.

Original language	English
Pages (from-to)	2275-2282
Number of pages	8
Journal	Journal of Materials Research
Volume	23
Issue number	8
DOIs	https://doi.org/10.1557/jmr.2008.0285
State	Published - Aug 2008

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title = "Improving the high-temperature oxidation resistance of Zr2 Al3C4 by silicon pack cementation",

abstract = "Silicon pack cementation has been applied to improve the oxidation resistance of Zr2 Al3C4. The Si pack coating is mainly composed of an inner layer of ZrSi2 and SiC and an outer layer of Al2O3 at 1200 °C. The growth kinetics of silicide coating at 1000-1200 °C obey a parabolic law with an activation energy of 110.3 ± 16.7 kJ/mol, which is controlled by inward diffusion of Si and outward diffusion of Al. Compared with Zr2 Al3C4, the oxidation resistance of siliconized Zr2Al3C4 is greatly improved due to the formation of protective oxidation products, aluminosilicate glass, mullite, and ZrSiO4.",

author = "He, \{L. F.\} and Bao, \{Y. W.\} and Li, \{M. S.\} and Wang, \{J. Y.\} and Zhou, \{Y. C.\}",

year = "2008",

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doi = "10.1557/jmr.2008.0285",

language = "English",

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TY - JOUR

T1 - Improving the high-temperature oxidation resistance of Zr2 Al3C4 by silicon pack cementation

AU - He, L. F.

AU - Bao, Y. W.

AU - Li, M. S.

AU - Wang, J. Y.

AU - Zhou, Y. C.

PY - 2008/8

Y1 - 2008/8

N2 - Silicon pack cementation has been applied to improve the oxidation resistance of Zr2 Al3C4. The Si pack coating is mainly composed of an inner layer of ZrSi2 and SiC and an outer layer of Al2O3 at 1200 °C. The growth kinetics of silicide coating at 1000-1200 °C obey a parabolic law with an activation energy of 110.3 ± 16.7 kJ/mol, which is controlled by inward diffusion of Si and outward diffusion of Al. Compared with Zr2 Al3C4, the oxidation resistance of siliconized Zr2Al3C4 is greatly improved due to the formation of protective oxidation products, aluminosilicate glass, mullite, and ZrSiO4.

AB - Silicon pack cementation has been applied to improve the oxidation resistance of Zr2 Al3C4. The Si pack coating is mainly composed of an inner layer of ZrSi2 and SiC and an outer layer of Al2O3 at 1200 °C. The growth kinetics of silicide coating at 1000-1200 °C obey a parabolic law with an activation energy of 110.3 ± 16.7 kJ/mol, which is controlled by inward diffusion of Si and outward diffusion of Al. Compared with Zr2 Al3C4, the oxidation resistance of siliconized Zr2Al3C4 is greatly improved due to the formation of protective oxidation products, aluminosilicate glass, mullite, and ZrSiO4.

UR - https://www.scopus.com/pages/publications/50449089651

U2 - 10.1557/jmr.2008.0285

DO - 10.1557/jmr.2008.0285

M3 - Article

AN - SCOPUS:50449089651

SN - 0884-2914

VL - 23

SP - 2275

EP - 2282

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 8

ER -

Improving the high-temperature oxidation resistance of Zr₂ Al₃C₄ by silicon pack cementation

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