High-fluence Co implantation in Si, SiO₂/Si and Si₃N₄/Si. Part II: Sputtering yield transients, the approach to high-fluence equilibrium

The partial sputtering yields of different species from silicon dioxide/Si and silicon nitride/Si during high-fluence keV Co Metal Vapour Vacuum Arc (MEVVA) irradiation are of importance for both silicide formation and interpretation of sputter profiling. Three sets of samples, nitride/Si(1 0 0), oxide/Si(1 0 0) and oxide/Si(1 1 1), have been bombarded to different normal fluences from 1×10¹⁶ to 2.6×10¹⁸ ions cm^-2. The partial sputtering yields for N and Si in the thick nitride films are approximately 1.0 and approximately 0.65, respectively, which indicates that the relative sputtering ratio of N/Si is approximately 1.5. The partial sputtering yields for O and Si of oxide/Si(1 0 0) samples are determined as approximately 1.0 and approximately 0.3, respectively. Although the O and Si sputtering yields from oxide/Si(1 1 1) samples are approximately 15% higher, the average sputtering ratio of O/Si is approximately 3.4, the same for both sets of oxide/Si samples.