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Fourth-generation microstructured semiconductor neutron detector (MSND)-based 3He replacement (HeRep) for high pressure 3He detectors

  • Taylor R. Ochs
  • , Steven L. Bellinger
  • , Ryan G. Fronk
  • , Luke C. Henson
  • , David E. Huddleston
  • , Graham E. Schlaikier
  • , Timothy J. Sobering
  • , Adam Van Bergeijk
  • , Douglas S. McGregor

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Two fourth-generation 3He replacement (HeRep Mk IV) detectors based on microstructured semiconductor neutron detector (MSND) technology have been fabricated and characterized against a 0.75-in diameter by 3.0-in long, 10-atm 3He neutron proportional counter. The HeRep Mk IV detectors have a 0.75-in by 0.75-in square form factor with one HeRep Mk IV measuring 3.1-in long and the other measuring 6.1-in long. Each HeRep Mk IV was populated with 15 DS-MSNDs that have an intrinsic thermal-neutron detection efficiency of approximately 50%. The void spaces between adjacent detectors in the 6.1-in long HeRep Mk IV were filled with HDPE moderator. The 3.1-in long HeRep Mk IV recorded 92.8 ± 1.8% of the count rate of the 10-atm 3He detector for bare 26.5-ng 2S2Cf, bare detector and 82.2 ± 0.9% for moderated 2S2Cf source, moderated detector configurations. The 6.1-in long HeRep Mk IV count rate was 108.5 ± 2.0% and 113.8 ± 1.2% of the count rate of the 10-atm 3He detector for bare 2S2Cf, bare detector and moderated 282Cf, moderated detector, respectively. The gamma-ray rejection ratio was determined for 137Cs at a dose rate of 50 mR/hr. The gamma-ray rejection ratio was 1:1.5x108 and 1:4.6x108 for the 3.1-in long and 6.1-in long HeRep Mk IV, respectively. The HeRep Mk IVs exhibit a 116% (3.1-in long) and 33% (6.1-in long) improvement in intrinsic detection efficiency over the 0.75-in diameter by 4.5-in long HeRep Mk III for moderated 282Cf at 25 cm.

Original languageEnglish
Title of host publication2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509016426
DOIs
StatePublished - Oct 16 2017
Event2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016 - Strasbourg, France
Duration: Oct 29 2016Nov 6 2016

Publication series

Name2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
Volume2017-January

Conference

Conference2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
Country/TerritoryFrance
CityStrasbourg
Period10/29/1611/6/16

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