@article{9045b12cadeb442689cb2dbeadd7f1c1,
title = "Formation of cobalt silicide films by ion beam deposition",
abstract = "Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(1 1 1) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 °C for 30 min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 °C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.",
keywords = "Electron microscopy, Ion beam analysis, Silicide, Synthesis",
author = "Y. Zhang and McCready, {D. E.} and Wang, {C. M.} and J. Young and McKinley, {M. I.} and Whitlow, {H. J.} and A. Razpet and G. Possnert and T. Zhang and Y. Wu",
note = "Funding Information: We are grateful to the staff at the Tandem Laboratory, Uppsala University, Sweden for accelerator operations and experimental assistance. This work was partially supported by Division of Materials Science and Engineering, the Office of Basic Energy Sciences, US Department of Energy. The operational support for the EMSL facilities was provided by the Office of Biological and Environmental Research, US Department of Energy. Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy under Contract No. DE-AC06-76RLO 1830. Y.Z. is grateful to Dr. W.J. Weber for helpful discussions. H.J.W. and Y.Z. are grateful for travel support from the Royal Physiographical Society in Sweden.",
year = "2006",
month = jan,
doi = "10.1016/j.nimb.2005.08.134",
language = "English",
volume = "242",
pages = "602--604",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier B.V.",
number = "1-2",
}