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Far-infrared reflection absorption spectroscopy: Low frequency studies on single-crystal oxide surfaces

  • M. Pilling
  • , T. He
  • , C. Hirschmugl

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Synchrotron-based Far-IR Reflection Absorption Spectroscopy (Far-IRAS) is ideal for investigating low energy dynamics at surfaces. In particular, bonding modes between an adsorbate and substrate typically lie below 1000 cm"1 and are more sensitive to the local geometrical and electronic structures. A bright synchrotron source affords the ability to investigate these low frequency modes at high resolution for restrictive experimental (throughputs) geometries. Furthermore, a grazing incidence geometry with a limited throughput is necessary to gain information about the bonds at the adsorbate/substrate interface especially for substrates that absorb infrared light. This technique, proven in studies of adsorbate/metal interfaces, is extended to study the interface between adsorbates and oxide substrates. Two approaches to this class of experiments will be introduced and the intrinsic noise limitations of each will be discussed.

Original languageEnglish
Title of host publicationSynchrotron Radiation Instrumentation, SRI 1999 - 11th US National Conference
EditorsPiero Pianetta, John Arthur, Sean Brennan
PublisherAmerican Institute of Physics Inc.
Pages41-46
Number of pages6
ISBN (Electronic)1563969416, 9781563969416
DOIs
StatePublished - Jun 6 2000
Event11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999 - Stanford, United States
Duration: Oct 13 1999Oct 15 1999

Publication series

NameAIP Conference Proceedings
Volume521
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference11th US National Conference on Synchrotron Radiation Instrumentation, SRI 1999
Country/TerritoryUnited States
CityStanford
Period10/13/9910/15/99

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