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Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy

  • Brandon Dzuba
  • , Trang Nguyen
  • , Amrita Sen
  • , Rosa E. Diaz
  • , Megha Dubey
  • , Mukesh Bachhav
  • , Janelle P. Wharry
  • , Michael J. Manfra
  • , Oana Malis

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Growth of wurtzite Sc x Al 1−x N (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc 0.18 Al 0.82 N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.
Original languageEnglish
Article number175701
Pages (from-to)175701
JournalJournal of Applied Physics
Volume132
Issue number17
Early online dateNov 1 2022
DOIs
StatePublished - Nov 7 2022

INL Publication Number

  • INL/JOU-23-71238
  • 148716

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