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Electronic stopping powers for heavy ions in SiC and SiO
2
K. Jin
, Y. Zhang
, Z. Zhu
, D. A. Grove
, H. Xue
, J. Xue
, W. J. Weber
Research output
:
Contribution to journal
›
Article
›
peer-review
41
Scopus citations
Overview
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2
'. Together they form a unique fingerprint.
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Keyphrases
Silica
100%
Heavy Ions
100%
Ion Range
100%
Electronic Stopping Power
100%
Au Ions
50%
Stopping Power
50%
Secondary Ion Mass Spectrometry
50%
Rutherford Backscattering Spectrometry
50%
Prediction Method
25%
Electronics Industry
25%
Materials Science
25%
Single Ion
25%
Functional Materials
25%
Energy Regime
25%
Depth Profile
25%
Large Deviations
25%
Light Target
25%
Damage Profile
25%
Cl Ion
25%
Experimental Validation
25%
Target Current
25%
Space Exploration
25%
Power Values
25%
Industry Space
25%
Sustainable Energy Technologies
25%
Ion Distribution
25%
Ion Profile
25%
Chemistry
electronics
100%
Heavy Ion
100%
Stopping Power
100%
Secondary Ion Mass Spectroscopy
33%
Rutherford Backscattering Spectroscopy
33%
Gold Ion
33%
Bromine Ion
16%
Iodine Ion
16%
Medicine and Dentistry
Silicon Dioxide
100%
Secondary Ion Mass Spectrometry
100%
Heavy Ion
100%
Rutherford Backscattering Spectrometry
100%
Material Science
Gold Ion
100%
Secondary Ion Mass Spectrometry
100%
Rutherford Backscattering Spectrometry
100%
Functional Material
50%
Physics
Heavy Ion
100%
Stopping Power
100%
Backscattering
33%
Secondary Ion Mass Spectrometry
33%
Renewable Energy
16%
Space Exploration
16%
Energy Technology
16%
Ion Distribution
16%