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Electron diffraction radial distribution function analysis of amorphous boron carbide synthesized by ion beam irradiation and chemical vapor deposition

  • Manabu Ishimaru
  • , Ryusuke Nakamura
  • , Yanwen Zhang
  • , William J. Weber
  • , George G. Peterson
  • , Natale J. Ianno
  • , Michael Nastasi

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Amorphous boron carbide (a-BxC) networks consist of light elements, and their low atomic scattering factors makes structural analysis by x-ray diffraction difficult. Electron diffraction has an advantage of detecting the light elements, because of the strong interaction between the matter and electrons. We prepared a-BxC by ion beam technologies and plasma-enhanced chemical vapor deposition, and characterized their structures via atomic pair-distribution functions derived from electron diffraction intensity profiles. It was found that a pentagonal pyramid is the most favorable cluster in a-B4C generated by ion irradiation, while C[sbnd]C homonuclear bonds were formed in the deposited a-BxC thin film. X-ray photoemission spectroscopy revealed that the a-BxC thin film possesses more carbon than B4C, which is responsible for the formation of the homonuclear bonds.

Original languageEnglish
Pages (from-to)376-382
Number of pages7
JournalJournal of the European Ceramic Society
Volume42
Issue number2
Early online dateOct 18 2021
DOIs
StatePublished - Feb 2022
Externally publishedYes

Keywords

  • Amorphous
  • Atomic pair-distribution function
  • Boron carbide
  • Electron diffraction

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