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Electrochemical formation of Se atomic layers on Au(100)

  • T. E. Lister
  • , B. M. Huang
  • , R. D. Herrick
  • , J. L. Stickney

Research output: Contribution to journal › Conference article › peer-review

37 Scopus citations

Abstract

Studies of the electrodeposition of atomic layers of Se have been prompted by their importance in the formation of II-VI compound semiconductors by electrochemical atomic layer epitaxy (ECALE). ECALE is a method where a compound is formed by the sequential, alternated, electrodeposition of atomic layers of the constituent elements making up a compound. It has been shown that the structure of the first atomic layer is generally the most critical. The present article describes three different methods for forming that first atomic layer. Studies of the structures resulting from those methods have revealed four distinctly different Se structures, all of which can be considered atomic layers, as none is more than a single-Se atom thick.

Original languageEnglish
Pages (from-to)1268-1273
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number3
DOIs
StatePublished - May 1995
EventProceedings of the 3rd International Conference on Nanometer-Scale Science and Technology - Denver, CO, USA
Duration: Oct 24 1994 → Oct 28 1994

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