Abstract
Studies of the electrodeposition of atomic layers of Se have been prompted by their importance in the formation of II-VI compound semiconductors by electrochemical atomic layer epitaxy (ECALE). ECALE is a method where a compound is formed by the sequential, alternated, electrodeposition of atomic layers of the constituent elements making up a compound. It has been shown that the structure of the first atomic layer is generally the most critical. The present article describes three different methods for forming that first atomic layer. Studies of the structures resulting from those methods have revealed four distinctly different Se structures, all of which can be considered atomic layers, as none is more than a single-Se atom thick.
| Original language | English |
|---|---|
| Pages (from-to) | 1268-1273 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 13 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 1995 |
| Event | Proceedings of the 3rd International Conference on Nanometer-Scale Science and Technology - Denver, CO, USA Duration: Oct 24 1994 → Oct 28 1994 |
Fingerprint
Dive into the research topics of 'Electrochemical formation of Se atomic layers on Au(100)'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver