Abstract
Nanowire AlGaN III-nitride LEDs are claimed as potential high-efficiency solid-state photon sources spanning to the short-wavelength deep ultraviolet (UV). Nanowire LEDs (NWLEDs) emitting in the UV are compared with a transparent n-AlGaN top electrode formed by coalescing the top region of nanowire–ensemble LEDs with commonly employed opaque conformal metallic electrodes used for nanowire-based devices. The use of a transparent contact results in an increase in the wall plug efficiency of >25×, exceeding the expected increase due to enhanced photon-extraction efficiency. Increased nanowire connectivity reduces the short-circuit pathways, enabling higher device yields of relatively large-area (>1 mm2) UV nanowire–ensemble LEDs. Despite these large relative improvements, the absolute output efficiency remains miniscule (<1 m%). Electroluminescence microscopy demonstrates that <0.1% of nanowires within the ensemble contribute to emission. The single-nanowire efficiency is estimated and points toward improvement of the homogeneity of the injection current as a crucial step for realizing commercially viable UV NWLEDs.
Original language | English |
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Article number | 2300399 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 18 |
Issue number | 4 |
Early online date | Dec 14 2023 |
DOIs | |
State | Published - Dec 24 2023 |
Externally published | Yes |
Keywords
- AlGaN
- nanowire LEDs
- ultraviolet LEDs
- wide bandgap semiconductors