Effects of implantation temperature on damage accumulation in Al-implanted 4H-SiC

The effects of implantation temperature on damage accumulation due to Al implantation in 4H-SiC were investigated. A disorder accumulation model was proposed to describe the defect clusters, which is applied over a wide range of ion fluences and temperatures to understand the dynamics of damage accumulation. It was shown that dynamic recovery of the ion-induced damage occurs due to increase in irradiation temperature and cluster-stimulated amorphization becomes dominant. Dislocation loops, which were formed under high ion flux irradiations, acts as sinks for point defects that reduce the disorder accumulation rate. The results indicate that the defect-stimulated amorphization is the primary mechanism leading to amorphization in SiC at and below 400K.