Effects of dynamic recovery on amorphization kinetics in 6H-SiC

William J. Weber; Lumin Wang; Yanwen Zhang; Weilin Jiang; In Tae Bae

doi:10.1016/j.nimb.2008.03.119

Effects of dynamic recovery on amorphization kinetics in 6H-SiC

William J. Weber
, Lumin Wang
, Yanwen Zhang
, Weilin Jiang
, In Tae Bae

Materials, Manufacturing, & Bioenergy S&T

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Irradiation-induced amorphization in 6H-SiC has been previously studied as a function of irradiation temperature for electrons and ions ranging from Ne to Au. Analysis of these data with a dynamic model for amorphization reveals that the amorphization dose increases and the critical amorphization temperature decreases as the ratio of in-cascade ionization to displacement rates increases. Model fits to the data yield the ratio of radiation-induced recovery cross section, σ_r, to damage cross section, σ_d, and an activation energy of 0.12 ± 0.01 eV for irradiation-induced recovery. The critical temperature exhibits a linear dependence on 1/ln(σ_r/σ_d), consistent with the model.

Original language	English
Pages (from-to)	2793-2796
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	266
Issue number	12-13
DOIs	https://doi.org/10.1016/j.nimb.2008.03.119
State	Published - Jun 2008

Keywords

Amorphization
Ionization effects
Irradiation effects
Recovery
Silicon carbide

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10.1016/j.nimb.2008.03.119

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@article{a2df990ee6394b84ae8ed18c168c7ff4,

title = "Effects of dynamic recovery on amorphization kinetics in 6H-SiC",

abstract = "Irradiation-induced amorphization in 6H-SiC has been previously studied as a function of irradiation temperature for electrons and ions ranging from Ne to Au. Analysis of these data with a dynamic model for amorphization reveals that the amorphization dose increases and the critical amorphization temperature decreases as the ratio of in-cascade ionization to displacement rates increases. Model fits to the data yield the ratio of radiation-induced recovery cross section, σr, to damage cross section, σd, and an activation energy of 0.12 ± 0.01 eV for irradiation-induced recovery. The critical temperature exhibits a linear dependence on 1/ln(σr/σd), consistent with the model.",

keywords = "Amorphization, Ionization effects, Irradiation effects, Recovery, Silicon carbide",

author = "Weber, \{William J.\} and Lumin Wang and Yanwen Zhang and Weilin Jiang and Bae, \{In Tae\}",

note = "Funding Information: This research was supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy under Contract DE-AC05-76RL01830.",

year = "2008",

month = jun,

doi = "10.1016/j.nimb.2008.03.119",

language = "English",

volume = "266",

pages = "2793--2796",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "12-13",

}

TY - JOUR

T1 - Effects of dynamic recovery on amorphization kinetics in 6H-SiC

AU - Weber, William J.

AU - Wang, Lumin

AU - Zhang, Yanwen

AU - Jiang, Weilin

AU - Bae, In Tae

N1 - Funding Information: This research was supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy under Contract DE-AC05-76RL01830.

PY - 2008/6

Y1 - 2008/6

N2 - Irradiation-induced amorphization in 6H-SiC has been previously studied as a function of irradiation temperature for electrons and ions ranging from Ne to Au. Analysis of these data with a dynamic model for amorphization reveals that the amorphization dose increases and the critical amorphization temperature decreases as the ratio of in-cascade ionization to displacement rates increases. Model fits to the data yield the ratio of radiation-induced recovery cross section, σr, to damage cross section, σd, and an activation energy of 0.12 ± 0.01 eV for irradiation-induced recovery. The critical temperature exhibits a linear dependence on 1/ln(σr/σd), consistent with the model.

AB - Irradiation-induced amorphization in 6H-SiC has been previously studied as a function of irradiation temperature for electrons and ions ranging from Ne to Au. Analysis of these data with a dynamic model for amorphization reveals that the amorphization dose increases and the critical amorphization temperature decreases as the ratio of in-cascade ionization to displacement rates increases. Model fits to the data yield the ratio of radiation-induced recovery cross section, σr, to damage cross section, σd, and an activation energy of 0.12 ± 0.01 eV for irradiation-induced recovery. The critical temperature exhibits a linear dependence on 1/ln(σr/σd), consistent with the model.

KW - Amorphization

KW - Ionization effects

KW - Irradiation effects

KW - Recovery

KW - Silicon carbide

UR - https://www.scopus.com/pages/publications/44649093272

U2 - 10.1016/j.nimb.2008.03.119

DO - 10.1016/j.nimb.2008.03.119

M3 - Article

AN - SCOPUS:44649093272

SN - 0168-583X

VL - 266

SP - 2793

EP - 2796

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 12-13

ER -

Effects of dynamic recovery on amorphization kinetics in 6H-SiC

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