TY - JOUR
T1 - Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays
AU - Nordstrom, Madison D.
AU - Garrett, Trent A.
AU - Reddy, Pooja
AU - McElearney, John
AU - Rushing, James R.
AU - Vallejo, Kevin D.
AU - Mukherjee, Kunal
AU - Grossklaus, Kevin A.
AU - Vandervelde, Thomas E.
AU - Simmonds, Paul J.
N1 - Funding Information:
This work was supported through the INL Laboratory Directed Research and Development Program under U.S. Department of Energy Idaho Operations Office Contract DE-AC07-05ID14517. The HRXRD work was carried out using the MIT.nano facilities. The transmission electron microscopy portion of this work was carried out at the Center for Nanoscale Systems (CNS), which is supported by the National Science Foundation under NSF award no. 1541959. CNS is part of Harvard University.
Publisher Copyright:
© 2023 The Authors. Published by American Chemical Society.
PY - 2023/12/6
Y1 - 2023/12/6
N2 - We demonstrate that when highly lattice-mismatched GaSb layers are grown on GaAs(111)A substrates, the strain can be relieved by a self-assembled array of interfacial misfit (IMF) dislocations. This 2D array consists of periodically spaced, pure 60° dislocations that lie in the plane of the GaSb/GaAs(111)A interface. The efficient strain relief provided by the IMF means that the GaSb exhibits good material quality, with threading dislocation densities in the 2-3 × 108 cm-2 range. Other through-film defects associated with twinned GaSb(111) regions have densities between 0.2 and 2 × 108 cm-2. The ability to grow GaSb on GaAs substrates with a (111) orientation creates research opportunities for the integration of dissimilar materials.
AB - We demonstrate that when highly lattice-mismatched GaSb layers are grown on GaAs(111)A substrates, the strain can be relieved by a self-assembled array of interfacial misfit (IMF) dislocations. This 2D array consists of periodically spaced, pure 60° dislocations that lie in the plane of the GaSb/GaAs(111)A interface. The efficient strain relief provided by the IMF means that the GaSb exhibits good material quality, with threading dislocation densities in the 2-3 × 108 cm-2 range. Other through-film defects associated with twinned GaSb(111) regions have densities between 0.2 and 2 × 108 cm-2. The ability to grow GaSb on GaAs substrates with a (111) orientation creates research opportunities for the integration of dissimilar materials.
UR - http://www.scopus.com/inward/record.url?scp=85177818649&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.3c00812
DO - 10.1021/acs.cgd.3c00812
M3 - Article
AN - SCOPUS:85177818649
SN - 1528-7483
VL - 23
SP - 8670
EP - 8677
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 12
ER -