Deuterium transport in Cu, CuCrZr, and Cu/Be

This paper presents the results of deuterium implantation/permeation experiments and TMAP4 simulations for a CuCrZr alloy, for OFHC-Cu and for a Cu/Be bi-layered structure at temperatures from 700 to 800 K. Experiments used a mass-analyzed, 3-keV D₃⁺ ion beam with particle flux densities of 5×10¹⁹ to 7×10¹⁹ D/m² s. Effective diffusivities and surface molecular recombination coefficients were derived giving Arrhenius pre-exponentials and activation energies for each material: CuCrZr alloy, (2.0×10^-2 m²/s, 1.2 eV) for diffusivity and (2.9×x10^-14 m⁴/s, 1.92 eV) for surface molecular recombination coefficients; OFHC Cu, (2.1×10^-6 m²/s, 0.52 eV) for diffusivity and (9.1×10^-18 m⁴/s, 0.99 eV) for surface molecular recombination coefficients. TMAP4 simulation of permeation data measured for a Cu/Be bilayer sample was achieved using a four-layer structure (Cu/BeO interface/Be/BeO back surface) and recommended values for diffusivity and solubility in Be, BeO and Cu.