Damage production in silicon carbide by dual ion beams irradiation

Keyphrases

• Silicon Carbide 100%
• Damage Production 100%
• Dual Ion Beam Irradiation 100%
• Damage Level 66%
• Mechanical Properties 33%
• Raman Spectroscopy 33%
• Ion Irradiation 33%
• Defect Evolution 33%
• Covalent Bond 33%
• He Ion Irradiation 33%
• Nanoindentation Test 33%
• He Atom 33%
• Irradiated Sample 33%
• He Ion Implantation 33%
• Defect Type 33%
• 6H-SiC 33%
• Nanohardness 33%
• Raman Spectra 33%
• Single-crystalline 33%
• Defect Interaction 33%
• Damage State 33%
• Complex Defects 33%
• Hardening Effect 33%
• High-resolution X-ray Diffraction (HRXRD) 33%
• Irradiation Process 33%
• Si Ions 33%
• Strain Profile 33%
• Dual Ion Irradiation 33%
• Si Ion Implantation 33%
• Lattice Damage 33%
• Lattice Evolution 33%
• Normal Strain 33%
• Chemical Bonding States 33%

Engineering

• Beam Irradiation 100%
• Damage Level 66%
• High Resolution 33%
• Covalent 33%
• Ion Implantation 33%
• Related Defect 33%
• Nanohardness 33%
• Raman Spectra 33%
• Damage State 33%
• Hardening Effect 33%
• Strain Profile 33%
• Normal Strain 33%
• Nanoindentation Test 33%
• X Ray Diffraction 33%

Material Science

• Silicon Carbide 100%
• Ion Bombardment 100%
• Indentation Hardness Testing 33%
• Raman Spectroscopy 33%
• Covalent Bond 33%
• Ion Implantation 33%
• Nanoindentation 33%
• Nanohardness 33%
• Chemical Bonding 33%
• High Resolution X-Ray Diffraction 33%