@article{a5c4973f96134765afd2814d4f4cdaba,
title = "Damage evolution in GaN under MeV heavy ion implantation",
abstract = "Damage evaluation processes in patterned GaN implanted by 3 MeV Au 2+ ions were investigated as a function of ion fluences and annealing temperatures. Surface swelling was observed by using atomic force microscopy and the results showed that the swelling height depends on ion fluence and annealing temperature. The authors observed four-stage implantation-induced damage evolution including point-defect formation, defect clustering, amorphization/bubble formation, and eventually, decomposition. This evolution is contributed to irradiation-induced defect production and defect migration/accumulation occurred at different levels of displacement per atom. Craterlike holes were observed on the surface of GaN implanted at the ion fluence of 2× 1016 cm-2, which is evidence of N loss, and broken bubbles formed during implantation.",
author = "Yuan Gao and Jianming Xue and Dongzheng Zhang and Zilong Wang and Chune Lan and Sha Yan and Yugang Wang and Fujun Xu and Bo Shen and Yanwen Zhang",
note = "Funding Information: The authors would like to thank L. P. Wen for assistance in AFM, and L. W. Sang and D. Li for assistance in thermal annealing process. This work was financially supported by the Ministry of Science and Technology of China (Grant No. 2010CB832904). Y.Z. was supported by the Division of Materials Science and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy. A portion of the research was performed at the Environmental Molecular Sciences Laboratory (EMSL), a national scientific user facility sponsored by the Department of Energy{\textquoteright}s Office of Biological and Environmental Research. Pacific Northwest National Laboratory is operated by Battelle for the U.S. Department of Energy under Contract No. DE-AC05-76RL01830. ",
year = "2009",
doi = "10.1116/1.3244591",
language = "English",
volume = "27",
pages = "2342--2346",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",
}