Characterization of strained Si/Si1-xGex/Si heterostructures annealed in oxygen or argon

A. C. Lindgren; C. Chen; S. L. Zhang; M. Östling; Y. Zhang; D. Zhu

doi:10.1063/1.1436290

Characterization of strained Si/Si_1-xGe_x/Si heterostructures annealed in oxygen or argon

A. C. Lindgren, C. Chen, S. L. Zhang, M. Östling, Y. Zhang, D. Zhu

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Abstract

The strained Si/Si_1-xGe_x/Si layer heterostructure heat treated from 700°C to 950°C in Ar (annealing) or O₂-C₂H₂Cl₂ (oxidation) was characterized using high-resolution x-ray diffraction in combination with Rutherford backscattering. Only small changes to the structure are observed up to 800°C, within the resolution limits of diffraction and backscattering. Severe strain relaxation occurs at 950°C and the heterostructure tends to relax more during annealing in Ar than during oxidation in O₂-C₂H₂Cl₂. The strain relaxation is mainly caused by interdiffusion of Si and Ge rather than formation of misfit dislocations. Diffusion of Si interstitials generated during oxidation into the heterostructure is suggested as the cause responsible for the less pronounced interdiffusion of Si and Ge in the oxidized samples.

Original language	English
Pages (from-to)	2708-2712
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	5
DOIs	https://doi.org/10.1063/1.1436290
State	Published - Feb 15 2002
Externally published	Yes

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abstract = "The strained Si/Si1-xGex/Si layer heterostructure heat treated from 700°C to 950°C in Ar (annealing) or O2-C2H2Cl2 (oxidation) was characterized using high-resolution x-ray diffraction in combination with Rutherford backscattering. Only small changes to the structure are observed up to 800°C, within the resolution limits of diffraction and backscattering. Severe strain relaxation occurs at 950°C and the heterostructure tends to relax more during annealing in Ar than during oxidation in O2-C2H2Cl2. The strain relaxation is mainly caused by interdiffusion of Si and Ge rather than formation of misfit dislocations. Diffusion of Si interstitials generated during oxidation into the heterostructure is suggested as the cause responsible for the less pronounced interdiffusion of Si and Ge in the oxidized samples.",

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AU - Lindgren, A. C.

AU - Chen, C.

AU - Zhang, S. L.

AU - Östling, M.

AU - Zhang, Y.

AU - Zhu, D.

PY - 2002/2/15

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AB - The strained Si/Si1-xGex/Si layer heterostructure heat treated from 700°C to 950°C in Ar (annealing) or O2-C2H2Cl2 (oxidation) was characterized using high-resolution x-ray diffraction in combination with Rutherford backscattering. Only small changes to the structure are observed up to 800°C, within the resolution limits of diffraction and backscattering. Severe strain relaxation occurs at 950°C and the heterostructure tends to relax more during annealing in Ar than during oxidation in O2-C2H2Cl2. The strain relaxation is mainly caused by interdiffusion of Si and Ge rather than formation of misfit dislocations. Diffusion of Si interstitials generated during oxidation into the heterostructure is suggested as the cause responsible for the less pronounced interdiffusion of Si and Ge in the oxidized samples.

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Characterization of strained Si/Si_1-xGe_x/Si heterostructures annealed in oxygen or argon

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