@inproceedings{619261dbd4d24b4aba7d11ab4eb64a76,
title = "Characterization of microstructured semiconductor neutron detectors",
abstract = "Silicon diodes with large aspect ratio microstructures backfilled with neutron-reactive material show a dramatic increase in neutron-detection efficiency beyond that of conventional thin-film coated planar devices. Described here are advancements in applications of the technology. The highest single-chip efficiency devices thus far have delivered over 30.1\% intrinsic thermal-neutron detection efficiency at normal incident, and 37.6\% at a 45° incident. The detectors operate as diffused pn-junction diodes each having 4-cm2 active area. The solid-state silicon device operates on zero to 2.7V and utilizes simple signal amplification and counting electronic components. The intrinsic detection-efficiency for normal-incident 0.0253 eV neutrons was found for the detectors by calibrating against a calibrated 3He proportional counter.",
author = "Bellinger, \{S. L.\} and Cooper, \{B. W.\} and Fronk, \{R. G.\} and L. Henson and T. Ochs and Sobering, \{T. J.\} and McGregor, \{D. S.\}",
year = "2013",
doi = "10.1109/NSSMIC.2013.6829849",
language = "English",
isbn = "9781479905348",
series = "IEEE Nuclear Science Symposium Conference Record",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013",
note = "2013 60th IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013 ; Conference date: 27-10-2013 Through 02-11-2013",
}