Additive-assisted synthesis and optoelectronic properties of (CH₃NH₃)₄Bi₆I₂₂

Keyphrases

• HgI2 100%
• Optoelectronic Properties 100%
• Assisted Synthesis 100%
• Methylammonium 100%
• BiI3 100%
• Low Temperature 50%
• High Stability 50%
• Band Gap 50%
• Diffuse Reflectance 50%
• Electronic Structure Calculations 50%
• Optical Properties 50%
• Optical Band Gap 50%
• Reflectance Measurement 50%
• Photoluminescence 50%
• Organic Halides 50%
• Conduction Band 50%
• Low-dimensional Structures 50%
• Hybrid Organic-inorganic 50%
• Band Gap Value 50%
• Flat Band 50%
• Valence Band 50%
• Low Toxicity 50%
• Target Preparation 50%
• Edge-sharing 50%
• Electronic Structure Properties 50%

Chemistry

• Band Gap 100%
• Optoelectronics 100%
• Crystal Structure 66%
• Electronic State 66%
• Bismuth 66%
• Methylammonium 66%
• Photoluminescence 33%
• Valence Band 33%
• Conduction Band 33%
• Halide 33%
• Optical Property 33%

Material Science

• Crystal Structure 100%
• Bismuth 100%
• Photoluminescence 50%
• Optical Property 50%
• Electronic Structure Calculation 50%
• Halide 50%